Solid-State Physics: An Introduction to Principles of Materials Science (4th Edition)
Harald Ibach, Hans Lüth
Language: English
Pages: 543
ISBN: 3540585737
Format: PDF / Kindle (mobi) / ePub
This new edition of the popular introduction to solid-state physics provides a comprehensive overview on basic theoretical and experimental concepts of material science. Additional sections emphasize current topics in solid-state physics.
Notably, sections on important devices, aspects of non-periodic structures of matter, phase transitions, defects, superconductors and nanostructures have been added, the chapters presenting semi- and superconductivity had been completly updated.
Students will benefit significantly from solving the exercises given at the end of each chapter. This book is intended for university students in physics, engineering and electrical engineering. This edition has been carefully revised, updated, and enlarged.
Among the key recent developments incorporated throughout GMR (giant magneto resistance), thin-film magnetic properties, magnetic hysteresis and domain walls, quantum transport, metamaterials, and preparation techniques for nanostructures.
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940 8C finally, only the solid phase exists for all mixing ratios. If the cooling process is performed using a melt with a mixing ratio of 50 atom% Ge and 50 atom% Si, e.g., crystallites with 80% Si will solidify first at a temperature of about 1270 8C. In the temperature range between the liquidus and solidus curve the equilibrium concentrations of Si in the 2.7 Defects in Solids 45 liquid and the solid state are given by the corresponding values for the concentrations of the liquidus and
a Frenkel pair increases the entropy. That increase arises from the fact that the atom as well as the vacancy may sit in any possible interstitial or lattice site, respectively, thereby enjoying many distinguishable microscopic realizations. The number of possibilities to distribute nv vacancies on N regular atom sites is N!/[nv!(N±nv)!]. Similarly, the number of possibilities to 46 2 Structure of Solid Matter distribute nint interstitial atoms on N' interstitial sites is NH 3anint 3 NH À
scattering of phonons by crystal defects, or ± for a highly perfect single crystal ± their scattering at the surface of the crystal. We then have the seemingly improbable, but nonetheless observed, phenomenon of the thermal conductivity that depends on the external dimensions of the crystal and the condition of its surface. The temperature dependence of k is determined here by the specific heat and is thus proportional to T 3. At higher temperatures, momentum and energy conservation may also
the free electron (spheres in k-space), produced by the periodic potential, occur when the Bragg condition is satisfied, i.e., for the k-vectors at the edge of the first Brillouin zone. It follows from (7.20 b), however, that besides CkÀG , the coecient Ck is equally important. Thus, in the system of (7.20 a), for this approximation we only need to consider two relations (V0 = 0): "2 2 h k Ck À VG CkÀG 0 EÀ 2m h2 " 2 jk À Gj CkÀG À VÀG Ck 0 X EÀ 2m (7.22) We thus obtain the secular
therefore has the form shown in Fig. 7.14. For onedimensional bandstructures, which, to a good approximation, can be used 178 7 The Electronic Bandstructure of Solids Fig. 7.14. Form of the density of states D (E) in the vicinity of the four possible types of critical point in three dimensions. The energy of the critical points is denoted by Ec and the corresponding k-space position by kci(i = 1, 2, 3). In the parabolic approximation, the energy band has the form E (k) = Ec + i i .
